A simple method to simulate the influence of defects on the short circuit current in amorphous silicon solar cells

P. Štulík; J. Singh

doi:10.1016/S0022-3093(98)00446-3

A simple method to simulate the influence of defects on the short circuit current in amorphous silicon solar cells

P. Štulík, J. Singh

Research output: Contribution to journal › Article › peer-review

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Abstract

An optical method for calculating the maximal photo-generated current in a p - i - n amorphous silicon (a-Si:H) solar cell is presented. Using an analytical expression for the rate of recombination, the short circuit current (J_sc) is derived as a function of the defect density. Our method enables us to calculate the optimal thickness (the thickness at maximum J_sc) of i-layer at a given defect density and hence helps designing a-Si:H solar cells for their optimal photovoltaic performance.

Original language	English
Pages (from-to)	299-303
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	226
Issue number	3
DOIs	https://doi.org/10.1016/S0022-3093(98)00446-3
Publication status	Published - Jun 1998

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10.1016/S0022-3093(98)00446-3

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abstract = "An optical method for calculating the maximal photo-generated current in a p - i - n amorphous silicon (a-Si:H) solar cell is presented. Using an analytical expression for the rate of recombination, the short circuit current (Jsc) is derived as a function of the defect density. Our method enables us to calculate the optimal thickness (the thickness at maximum Jsc) of i-layer at a given defect density and hence helps designing a-Si:H solar cells for their optimal photovoltaic performance.",

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AB - An optical method for calculating the maximal photo-generated current in a p - i - n amorphous silicon (a-Si:H) solar cell is presented. Using an analytical expression for the rate of recombination, the short circuit current (Jsc) is derived as a function of the defect density. Our method enables us to calculate the optimal thickness (the thickness at maximum Jsc) of i-layer at a given defect density and hence helps designing a-Si:H solar cells for their optimal photovoltaic performance.

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ER -

A simple method to simulate the influence of defects on the short circuit current in amorphous silicon solar cells

Abstract

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