Acoustic-phonon-assisted localization of free excitons due to interface roughness in quantum wells

I OH, Jai Singh

    Research output: Contribution to journalArticle

    Abstract

    The localization of free excitons due to interface roughness through the nonradiative processes in quantum wells was studied. The study was carried out by using the perturbation approach where the rate of localization of free excitons through acoustic phonon emission was calculated in GaAs quantum wells. It is observed that when the quantum well was subjected to photons with energy greater than band gap, several excitonic processes like free exciton with nonzero center-of-mass (COM) wave vector may occurred. The results show that the rate of localization was sensitive to the center-of-mass kinetic energy of free exciton.
    Original languageEnglish
    Pages (from-to)4883-4889
    Number of pages7
    JournalJournal of Applied Physics
    Volume95
    Issue number9
    Publication statusPublished - 2004

    Fingerprint Dive into the research topics of 'Acoustic-phonon-assisted localization of free excitons due to interface roughness in quantum wells'. Together they form a unique fingerprint.

  • Cite this