Abstract
The localization of free excitons due to interface roughness through the nonradiative processes in quantum wells was studied. The study was carried out by using the perturbation approach where the rate of localization of free excitons through acoustic phonon emission was calculated in GaAs quantum wells. It is observed that when the quantum well was subjected to photons with energy greater than band gap, several excitonic processes like free exciton with nonzero center-of-mass (COM) wave vector may occurred. The results show that the rate of localization was sensitive to the center-of-mass kinetic energy of free exciton.
| Original language | English |
|---|---|
| Pages (from-to) | 4883-4889 |
| Number of pages | 7 |
| Journal | Journal of Applied Physics |
| Volume | 95 |
| Issue number | 9 |
| Publication status | Published - 2004 |
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OH, I., & Singh, J. (2004). Acoustic-phonon-assisted localization of free excitons due to interface roughness in quantum wells. Journal of Applied Physics, 95(9), 4883-4889.