Assessment of the influence of charged dangling bonds on the short circuit current in amorphous silicon solar cells

Alagumalai Thilagam; Jai Singh

doi:10.1016/S0022-3093(01)00621-4

Assessment of the influence of charged dangling bonds on the short circuit current in amorphous silicon solar cells

Alagumalai Thilagam, Jai Singh

Research output: Contribution to journal › Article › peer-review

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Abstract

A theoretical study of the charged dangling bonds in p-i-n amorphous silicon (a-Si:H) solar cells is presented. An improved analytical expression of the bulk collection efficiency is derived incorporating charged dangling bonds. It is used in calculating the short circuit current employing the admittance analysis method to study the effect of D⁺ and D^- states. The method is extended to obtain results when the generation of charge carriers in the i-layer is dependent on position. The theory is general and can be applied to any multi-layered device structure.

Original language	English
Pages (from-to)	66-72
Number of pages	7
Journal	Journal of Non-Crystalline Solids
Volume	288
Issue number	1-3
DOIs	https://doi.org/10.1016/S0022-3093(01)00621-4
Publication status	Published - Aug 2001

Bibliographical note

Funding Information:
This work was supported by the Australian Research Council's (ARC) small grant scheme. One of us (A. Thilagam) is thankful to Dr P. Stulik for useful suggestions.

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10.1016/S0022-3093(01)00621-4

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title = "Assessment of the influence of charged dangling bonds on the short circuit current in amorphous silicon solar cells",

abstract = "A theoretical study of the charged dangling bonds in p-i-n amorphous silicon (a-Si:H) solar cells is presented. An improved analytical expression of the bulk collection efficiency is derived incorporating charged dangling bonds. It is used in calculating the short circuit current employing the admittance analysis method to study the effect of D+ and D- states. The method is extended to obtain results when the generation of charge carriers in the i-layer is dependent on position. The theory is general and can be applied to any multi-layered device structure.",

author = "Alagumalai Thilagam and Jai Singh",

note = "Funding Information: This work was supported by the Australian Research Council's (ARC) small grant scheme. One of us (A. Thilagam) is thankful to Dr P. Stulik for useful suggestions. ",

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AU - Thilagam, Alagumalai

AU - Singh, Jai

N1 - Funding Information: This work was supported by the Australian Research Council's (ARC) small grant scheme. One of us (A. Thilagam) is thankful to Dr P. Stulik for useful suggestions.

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N2 - A theoretical study of the charged dangling bonds in p-i-n amorphous silicon (a-Si:H) solar cells is presented. An improved analytical expression of the bulk collection efficiency is derived incorporating charged dangling bonds. It is used in calculating the short circuit current employing the admittance analysis method to study the effect of D+ and D- states. The method is extended to obtain results when the generation of charge carriers in the i-layer is dependent on position. The theory is general and can be applied to any multi-layered device structure.

AB - A theoretical study of the charged dangling bonds in p-i-n amorphous silicon (a-Si:H) solar cells is presented. An improved analytical expression of the bulk collection efficiency is derived incorporating charged dangling bonds. It is used in calculating the short circuit current employing the admittance analysis method to study the effect of D+ and D- states. The method is extended to obtain results when the generation of charge carriers in the i-layer is dependent on position. The theory is general and can be applied to any multi-layered device structure.

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 1-3

ER -

Assessment of the influence of charged dangling bonds on the short circuit current in amorphous silicon solar cells

Abstract

Bibliographical note

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