Abstract
A theoretical study of the charged dangling bonds in p-i-n amorphous silicon (a-Si:H) solar cells is presented. An improved analytical expression of the bulk collection efficiency is derived incorporating charged dangling bonds. It is used in calculating the short circuit current employing the admittance analysis method to study the effect of D+ and D- states. The method is extended to obtain results when the generation of charge carriers in the i-layer is dependent on position. The theory is general and can be applied to any multi-layered device structure.
| Original language | English |
|---|---|
| Pages (from-to) | 66-72 |
| Number of pages | 7 |
| Journal | Journal of Non-Crystalline Solids |
| Volume | 288 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - Aug 2001 |
Bibliographical note
Funding Information:This work was supported by the Australian Research Council's (ARC) small grant scheme. One of us (A. Thilagam) is thankful to Dr P. Stulik for useful suggestions.
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
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