Binding of quasi-two-dimensional biexcitons

D. Birkedal; Jai Singh; V. G. Lyssenko; J. Erland; J. M. Hvam

doi:10.1103/PhysRevLett.76.672

Binding of quasi-two-dimensional biexcitons

D. Birkedal, Jai Singh, V. G. Lyssenko, J. Erland, J. M. Hvam

Research output: Contribution to journal › Article › peer-review

181 Citations (Scopus)

Abstract

Biexciton binding in GaAs quantum wells has been investigated for a range of well thicknesses (80-160 Å) with spectrally resolved photoluminescence and transient degenerate four-wave mixing. Both light and heavy hole biexcitons are observed. The ratio of the binding energy of the heavy hole biexciton to that of the heavy hole exciton is found to be ≈0.2, and nearly independent of well width over the investigated range. A new theoretical calculation agrees very well with the experimental ratio. This ratio is larger than predicted by Hayne’s rule for three-dimensional biexcitons.

Original language	English
Pages (from-to)	672-675
Number of pages	4
Journal	Physical Review Letters
Volume	76
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevLett.76.672
Publication status	Published - 1996
Externally published	Yes

Access to Document

10.1103/PhysRevLett.76.672

Cite this

@article{eae0ba84fcc04ba78171ac8a9094b16a,

title = "Binding of quasi-two-dimensional biexcitons",

abstract = "Biexciton binding in GaAs quantum wells has been investigated for a range of well thicknesses (80-160 {\AA}) with spectrally resolved photoluminescence and transient degenerate four-wave mixing. Both light and heavy hole biexcitons are observed. The ratio of the binding energy of the heavy hole biexciton to that of the heavy hole exciton is found to be ≈0.2, and nearly independent of well width over the investigated range. A new theoretical calculation agrees very well with the experimental ratio. This ratio is larger than predicted by Hayne{\textquoteright}s rule for three-dimensional biexcitons.",

author = "D. Birkedal and Jai Singh and Lyssenko, {V. G.} and J. Erland and Hvam, {J. M.}",

year = "1996",

doi = "10.1103/PhysRevLett.76.672",

language = "English",

volume = "76",

pages = "672--675",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "4",

}

TY - JOUR

T1 - Binding of quasi-two-dimensional biexcitons

AU - Birkedal, D.

AU - Singh, Jai

AU - Lyssenko, V. G.

AU - Erland, J.

AU - Hvam, J. M.

PY - 1996

Y1 - 1996

N2 - Biexciton binding in GaAs quantum wells has been investigated for a range of well thicknesses (80-160 Å) with spectrally resolved photoluminescence and transient degenerate four-wave mixing. Both light and heavy hole biexcitons are observed. The ratio of the binding energy of the heavy hole biexciton to that of the heavy hole exciton is found to be ≈0.2, and nearly independent of well width over the investigated range. A new theoretical calculation agrees very well with the experimental ratio. This ratio is larger than predicted by Hayne’s rule for three-dimensional biexcitons.

AB - Biexciton binding in GaAs quantum wells has been investigated for a range of well thicknesses (80-160 Å) with spectrally resolved photoluminescence and transient degenerate four-wave mixing. Both light and heavy hole biexcitons are observed. The ratio of the binding energy of the heavy hole biexciton to that of the heavy hole exciton is found to be ≈0.2, and nearly independent of well width over the investigated range. A new theoretical calculation agrees very well with the experimental ratio. This ratio is larger than predicted by Hayne’s rule for three-dimensional biexcitons.

UR - http://www.scopus.com/inward/record.url?scp=7444235452&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.76.672

DO - 10.1103/PhysRevLett.76.672

M3 - Article

AN - SCOPUS:7444235452

SN - 0031-9007

VL - 76

SP - 672

EP - 675

JO - Physical Review Letters

JF - Physical Review Letters

IS - 4

ER -

Binding of quasi-two-dimensional biexcitons

Abstract

Access to Document

Other files and links

Fingerprint

Cite this