Electronic Properties of Noncrystalline Semiconductors

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

    Abstract

    The electronic properties of inorganic noncrystalline semiconductors are reviewed in this chapter using the effective mass approach in the real coordinate space. It is shown that many properties that can be studied through the effective mass approximation applied in the reciprocal lattice vector k-space in crystalline semiconductors can be studied in noncrystalline semiconductors in the real coordinate r-space. The effective masses of electrons and holes are derived in their respective extended and tail states within the real coordinate space. The mechanism of the double sign reversal leading to the anomalous Hall effect observed in hydrogenated amorphous silicon (a-Si: H) has been successfully explained using the theory of effective mass. It is demonstrated that excitons can also be formed in noncrystalline semiconductors and the energy difference between the singlet and triplet exciton energies is larger than in crystalline semiconductors. The application of the new time-dependent exciton-spin-orbit-photon interaction derived recently by the author has been reviewed for harvesting the radiative emission from triplet excitons, where the traditional perturbation approach cannot be applied very successfully.
    Original languageEnglish
    Title of host publicationExcitonic and Photonic Processes in Materials
    EditorsJai Singh, Richard T. Williams
    Place of PublicationSingapore
    PublisherSpringer
    Chapter7
    Pages193-228
    Number of pages36
    ISBN (Print)978-9-812-87130-5
    DOIs
    Publication statusPublished - 2015

    Publication series

    NameSpringer Series in Materials Science
    PublisherSpringer
    Volume203

    Fingerprint

    excitons
    electronics
    amorphous silicon
    Hall effect
    orbits
    perturbation
    energy
    photons
    approximation
    electrons
    interactions

    Cite this

    Singh, J. (2015). Electronic Properties of Noncrystalline Semiconductors. In J. Singh, & R. T. Williams (Eds.), Excitonic and Photonic Processes in Materials (pp. 193-228). (Springer Series in Materials Science; Vol. 203). Singapore: Springer. https://doi.org/10.1007/978-94-009-6440-2_17
    Singh, Jai. / Electronic Properties of Noncrystalline Semiconductors. Excitonic and Photonic Processes in Materials. editor / Jai Singh ; Richard T. Williams. Singapore : Springer, 2015. pp. 193-228 (Springer Series in Materials Science).
    @inbook{abcb352d399a4b4783d12f92a3855d1f,
    title = "Electronic Properties of Noncrystalline Semiconductors",
    abstract = "The electronic properties of inorganic noncrystalline semiconductors are reviewed in this chapter using the effective mass approach in the real coordinate space. It is shown that many properties that can be studied through the effective mass approximation applied in the reciprocal lattice vector k-space in crystalline semiconductors can be studied in noncrystalline semiconductors in the real coordinate r-space. The effective masses of electrons and holes are derived in their respective extended and tail states within the real coordinate space. The mechanism of the double sign reversal leading to the anomalous Hall effect observed in hydrogenated amorphous silicon (a-Si: H) has been successfully explained using the theory of effective mass. It is demonstrated that excitons can also be formed in noncrystalline semiconductors and the energy difference between the singlet and triplet exciton energies is larger than in crystalline semiconductors. The application of the new time-dependent exciton-spin-orbit-photon interaction derived recently by the author has been reviewed for harvesting the radiative emission from triplet excitons, where the traditional perturbation approach cannot be applied very successfully.",
    author = "Jai Singh",
    year = "2015",
    doi = "10.1007/978-94-009-6440-2_17",
    language = "English",
    isbn = "978-9-812-87130-5",
    series = "Springer Series in Materials Science",
    publisher = "Springer",
    pages = "193--228",
    editor = "Jai Singh and Williams, {Richard T.}",
    booktitle = "Excitonic and Photonic Processes in Materials",
    address = "Switzerland",

    }

    Singh, J 2015, Electronic Properties of Noncrystalline Semiconductors. in J Singh & RT Williams (eds), Excitonic and Photonic Processes in Materials. Springer Series in Materials Science, vol. 203, Springer, Singapore, pp. 193-228. https://doi.org/10.1007/978-94-009-6440-2_17

    Electronic Properties of Noncrystalline Semiconductors. / Singh, Jai.

    Excitonic and Photonic Processes in Materials. ed. / Jai Singh; Richard T. Williams. Singapore : Springer, 2015. p. 193-228 (Springer Series in Materials Science; Vol. 203).

    Research output: Chapter in Book/Report/Conference proceedingChapterResearchpeer-review

    TY - CHAP

    T1 - Electronic Properties of Noncrystalline Semiconductors

    AU - Singh, Jai

    PY - 2015

    Y1 - 2015

    N2 - The electronic properties of inorganic noncrystalline semiconductors are reviewed in this chapter using the effective mass approach in the real coordinate space. It is shown that many properties that can be studied through the effective mass approximation applied in the reciprocal lattice vector k-space in crystalline semiconductors can be studied in noncrystalline semiconductors in the real coordinate r-space. The effective masses of electrons and holes are derived in their respective extended and tail states within the real coordinate space. The mechanism of the double sign reversal leading to the anomalous Hall effect observed in hydrogenated amorphous silicon (a-Si: H) has been successfully explained using the theory of effective mass. It is demonstrated that excitons can also be formed in noncrystalline semiconductors and the energy difference between the singlet and triplet exciton energies is larger than in crystalline semiconductors. The application of the new time-dependent exciton-spin-orbit-photon interaction derived recently by the author has been reviewed for harvesting the radiative emission from triplet excitons, where the traditional perturbation approach cannot be applied very successfully.

    AB - The electronic properties of inorganic noncrystalline semiconductors are reviewed in this chapter using the effective mass approach in the real coordinate space. It is shown that many properties that can be studied through the effective mass approximation applied in the reciprocal lattice vector k-space in crystalline semiconductors can be studied in noncrystalline semiconductors in the real coordinate r-space. The effective masses of electrons and holes are derived in their respective extended and tail states within the real coordinate space. The mechanism of the double sign reversal leading to the anomalous Hall effect observed in hydrogenated amorphous silicon (a-Si: H) has been successfully explained using the theory of effective mass. It is demonstrated that excitons can also be formed in noncrystalline semiconductors and the energy difference between the singlet and triplet exciton energies is larger than in crystalline semiconductors. The application of the new time-dependent exciton-spin-orbit-photon interaction derived recently by the author has been reviewed for harvesting the radiative emission from triplet excitons, where the traditional perturbation approach cannot be applied very successfully.

    U2 - 10.1007/978-94-009-6440-2_17

    DO - 10.1007/978-94-009-6440-2_17

    M3 - Chapter

    SN - 978-9-812-87130-5

    T3 - Springer Series in Materials Science

    SP - 193

    EP - 228

    BT - Excitonic and Photonic Processes in Materials

    A2 - Singh, Jai

    A2 - Williams, Richard T.

    PB - Springer

    CY - Singapore

    ER -

    Singh J. Electronic Properties of Noncrystalline Semiconductors. In Singh J, Williams RT, editors, Excitonic and Photonic Processes in Materials. Singapore: Springer. 2015. p. 193-228. (Springer Series in Materials Science). https://doi.org/10.1007/978-94-009-6440-2_17