Electronic Properties of Noncrystalline Semiconductors

Jai Singh

    Research output: Chapter in Book/Report/Conference proceedingChapter

    Abstract

    The electronic properties of inorganic noncrystalline semiconductors are reviewed in this chapter using the effective mass approach in the real coordinate space. It is shown that many properties that can be studied through the effective mass approximation applied in the reciprocal lattice vector k-space in crystalline semiconductors can be studied in noncrystalline semiconductors in the real coordinate r-space. The effective masses of electrons and holes are derived in their respective extended and tail states within the real coordinate space. The mechanism of the double sign reversal leading to the anomalous Hall effect observed in hydrogenated amorphous silicon (a-Si: H) has been successfully explained using the theory of effective mass. It is demonstrated that excitons can also be formed in noncrystalline semiconductors and the energy difference between the singlet and triplet exciton energies is larger than in crystalline semiconductors. The application of the new time-dependent exciton-spin-orbit-photon interaction derived recently by the author has been reviewed for harvesting the radiative emission from triplet excitons, where the traditional perturbation approach cannot be applied very successfully.
    Original languageEnglish
    Title of host publicationExcitonic and Photonic Processes in Materials
    EditorsJai Singh, Richard T. Williams
    Place of PublicationSingapore
    PublisherSpringer
    Chapter7
    Pages193-228
    Number of pages36
    ISBN (Print)978-9-812-87130-5
    DOIs
    Publication statusPublished - 2015

    Publication series

    NameSpringer Series in Materials Science
    PublisherSpringer
    Volume203

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    Cite this

    Singh, J. (2015). Electronic Properties of Noncrystalline Semiconductors. In J. Singh, & R. T. Williams (Eds.), Excitonic and Photonic Processes in Materials (pp. 193-228). (Springer Series in Materials Science; Vol. 203). Springer. https://doi.org/10.1007/978-94-009-6440-2_17