TY - JOUR
T1 - Electrospun ZnO nanowire plantations in the electron transport layer for high-efficiency inverted organic solar cells
AU - Elumalai, Naveen Kumar
AU - Jin, Tan Mein
AU - Chellappan, Vijila
AU - Jose, Rajan
AU - Palaniswamy, Suresh Kumar
AU - Jayaraman, Sundaramurthy
AU - Raut, Hemant Kumar
AU - Ramakrishna, Seeram
PY - 2013
Y1 - 2013
N2 - Inverted bulk heterojunction organic solar cells having device structure ITO/ZnO/poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) /MoO3/Ag were fabricated with high photoelectric conversion efficiency and stability. Three types of devices were developed with varying electron transporting layer (ETL) ZnO architecture. The ETL in the first type was a sol–gel-derived particulate film of ZnO, which in the second and third type contained additional ZnO nanowires of varying concentrations. The length of the ZnO nanowires, which were developed by the electrospinning technique, extended up to the bulk of the photoactive layer in the device. The devices those employed a higher loading of ZnO nanowires showed 20% higher photoelectric conversion efficiency (PCE), which mainly resulted from an enhancement in its fill factor (FF). Charge transport characteristic of the device were studied by transient photovoltage decay and charge extraction by linearly increasing voltage techniques. Results show that higher PCE and FF in the devices employed ZnO nanowire plantations resulted from improved charge collection efficiency and reduced recombination rate.
AB - Inverted bulk heterojunction organic solar cells having device structure ITO/ZnO/poly(3-hexylthiophene) (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) /MoO3/Ag were fabricated with high photoelectric conversion efficiency and stability. Three types of devices were developed with varying electron transporting layer (ETL) ZnO architecture. The ETL in the first type was a sol–gel-derived particulate film of ZnO, which in the second and third type contained additional ZnO nanowires of varying concentrations. The length of the ZnO nanowires, which were developed by the electrospinning technique, extended up to the bulk of the photoactive layer in the device. The devices those employed a higher loading of ZnO nanowires showed 20% higher photoelectric conversion efficiency (PCE), which mainly resulted from an enhancement in its fill factor (FF). Charge transport characteristic of the device were studied by transient photovoltage decay and charge extraction by linearly increasing voltage techniques. Results show that higher PCE and FF in the devices employed ZnO nanowire plantations resulted from improved charge collection efficiency and reduced recombination rate.
UR - http://www.scopus.com/inward/record.url?scp=84885444208&partnerID=8YFLogxK
U2 - 10.1021/am4013853
DO - 10.1021/am4013853
M3 - Article
VL - 5
SP - 9396
EP - 9404
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
SN - 1944-8244
IS - 19
ER -