Exciton-exciton interaction in semiconductor quantum wells

Thilagam Lohe

    Research output: Contribution to journalComment/debate


    Analytical expressions of the effective exciton-exciton interaction in quantum wells are derived with a main focus on the dependence of the interactions on the quantum-well width. Any modification in the strength of the exciton-exciton interactions due to confinement is incorporated in alpha, a measure of dimensionality of the confined excitonic system. The flexibility of the derived expressions is shown in a systematic study of both the direct and exchange terms of the exciton-exciton interaction in CdTe/ZnxCd1-xTe and GaAs/AlxGa1-xAs quantum wells. Results show the appreciable sensitivity of interexcitonic interaction to cu due to changes in the extension of excitonic radial distribution and strength at which local charges are neutralized, perpendicular to the direction of the growth of well layers.
    Original languageEnglish
    Pages (from-to)045321-
    JournalPhysical Review B (Condensed Matter and Materials Physics)
    Issue number4
    Publication statusPublished - 2001


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