Excitonic contribution to photoluminescence in amorphous semiconductors

Jai Singh, T. Aoki, K. Shimakawa

    Research output: Contribution to journalComment/debate

    23 Citations (Scopus)


    Applying the effective-mass approach, the energy eigenvalues of excitonic states in amorphous semiconductors are derived. It is shown that Wannier-Mott-type excitons can indeed be formed in amorphous solids. The results show that the occurrence of the double photoluminescence (PL) lifetime distribution peak, fast and slow, in hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous germanium (a-Ge: H) can unambiguously be assigned to radiative recombinations from singlet and triplet excitonic states respectively. The dependence of PL peaks on the temperature and generation rate in a-Si: H and a-Ge: H is also discussed. The approach is general and simple and can be applied to study the charge-carrier transport and PL properties in any amorphous solid.
    Original languageEnglish
    Pages (from-to)855-871
    Number of pages17
    JournalPhilosophical Magazine B
    Issue number7
    Publication statusPublished - 2002


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