Abstract
A study of the process of exciton formation due to acoustic phonon interaction in quantum wells (QWs) is presented. Considering that excitons are formed from photoexcited free electron-hole pairs, we have derived the rate of such formation as a function of density and temperature of charge carriers and wavevector K∥ of the center-of-mass motion of exciton, and finally applied our theory to GaAs/AlGaAs QWs. We have found that the formation of an exciton due to acoustic phonon emission is more efficient at relatively large values of K∥ (hot excitons) whereas that due to longitudinal optical (LO) phonon emission is more efficient at relatively small values of K∥.
| Original language | English |
|---|---|
| Pages (from-to) | 221-229 |
| Number of pages | 9 |
| Journal | Superlattices and Microstructures |
| Volume | 30 |
| Issue number | 5 |
| DOIs |
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| Publication status | Published - 2001 |
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