TY - JOUR
T1 - Fundamental optical absorption on fractals
T2 - A case example for amorphous chalcogenides
AU - Meherun-Nessa,
AU - Shimakawa, K.
AU - Ganjoo, A.
AU - Singh, J.
PY - 2000
Y1 - 2000
N2 - The fundamental optical absorption in amorphous chalcogenides is described by the extended Taue plot, (αhv)n ∝ (hv -E0), where E0 is the so called optical gap. The value of n, experimentally found, lies between 1 and 0.4 for typical amorphous chalcogenides, while n = 1/2 for 3-dimensional (3D) case is well known for disordered semiconductors and insulators. It is shown that the presence of disorder can greatly influence the nature of the electronic density of states (DOS) even for the extended states. The concept of DOS on fractal structures is introduced to interpret the deviation from n = 1/2.
AB - The fundamental optical absorption in amorphous chalcogenides is described by the extended Taue plot, (αhv)n ∝ (hv -E0), where E0 is the so called optical gap. The value of n, experimentally found, lies between 1 and 0.4 for typical amorphous chalcogenides, while n = 1/2 for 3-dimensional (3D) case is well known for disordered semiconductors and insulators. It is shown that the presence of disorder can greatly influence the nature of the electronic density of states (DOS) even for the extended states. The concept of DOS on fractal structures is introduced to interpret the deviation from n = 1/2.
KW - Amorphous chalcogenides
KW - Density of states
KW - Fractals
KW - Fundamental optical absorption
UR - http://www.scopus.com/inward/record.url?scp=0012769557&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0012769557
SN - 1454-4164
VL - 2
SP - 133
EP - 138
JO - Journal of Optoelectronics and Advanced Materials
JF - Journal of Optoelectronics and Advanced Materials
IS - 2
ER -