TY - GEN
T1 - Graded (AlzGa1-z)xIn1-xP Window-Emitter Structures for Improved Short-Wavelength Response
AU - Mahmud, Md Arafat
AU - Elumalai, Naveen Kumar
AU - Upama, Mushfika Baishakhi
AU - Wang, Dian
AU - Wright, Matthew
AU - Chan, Kah Howe
AU - Xu, Cheng
AU - Uddin, Ashraf
N1 - Funding Information:
The authors gratefully acknowledge the financial support provided by Future Solar Technologies Pty. Ltd. for this research work. The authors would also like to acknowledge the endless support from the staffs of Photovoltaic and Renewable Energy Engineering School, Electron Microscope Unit (EMU) and Solid State and Elemental Analysis Unit under Mark Wainwright Analytical Center, UNSW.
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - Methyl Ammonium Lead Halide Perovskite solar have shown immense potential to be a 'Game Changer' in the photovoltaic industry. Major barriers to commercialization of Perovskite solar cells are poor device stability and high temperature requirement with TiO2 electron transport layer, widely used in efficient Perovskite devices. Apart from severe moisture sensitivity and thermal degradation, Perovskite layer can be decomposed due to the TBP additive incorporation with Li-TFSI dopant in most commonly used hole transport layers like Spiro OMeTAD and P3HT. Nearly 500° C sintering temperature requirement for Titania electron transport layer also impedes the Perovskite manufacturing in roll-to-roll process on flexible substrate which has a stringent processing condition of sub 150° C temperature. In this work, we have introduced F4TCNQ dopant to replace TBP and Li-TFSI in P3HT HTL in a low temperature (<150° C) solgel ZnO ETL processed Methyl Ammonium Lead Triiodide Perovskite solar cell. F4TCNQ doped P3HT HTL devices have shown over two times higher power conversion efficiency compared to pristine P3HT HTL devices. To comprehend the performance enhancement with F4TCNQ dopant in P3HT, we have examined the optical and electronic properties of both the pristine and F4TCNQ doped P3HT devices. Absorbance of Perovskite film lying underneath the undoped and the F4TCNQ doped P3HT film has been investigated to understand superior optical property of F4TCNQ incorporated film. Mott Schottky analysis has been conducted to enunciate the enhanced electronic property with F4TCNQ dopant in P3HT HTL compared to pristine P3HT.
AB - Methyl Ammonium Lead Halide Perovskite solar have shown immense potential to be a 'Game Changer' in the photovoltaic industry. Major barriers to commercialization of Perovskite solar cells are poor device stability and high temperature requirement with TiO2 electron transport layer, widely used in efficient Perovskite devices. Apart from severe moisture sensitivity and thermal degradation, Perovskite layer can be decomposed due to the TBP additive incorporation with Li-TFSI dopant in most commonly used hole transport layers like Spiro OMeTAD and P3HT. Nearly 500° C sintering temperature requirement for Titania electron transport layer also impedes the Perovskite manufacturing in roll-to-roll process on flexible substrate which has a stringent processing condition of sub 150° C temperature. In this work, we have introduced F4TCNQ dopant to replace TBP and Li-TFSI in P3HT HTL in a low temperature (<150° C) solgel ZnO ETL processed Methyl Ammonium Lead Triiodide Perovskite solar cell. F4TCNQ doped P3HT HTL devices have shown over two times higher power conversion efficiency compared to pristine P3HT HTL devices. To comprehend the performance enhancement with F4TCNQ dopant in P3HT, we have examined the optical and electronic properties of both the pristine and F4TCNQ doped P3HT devices. Absorbance of Perovskite film lying underneath the undoped and the F4TCNQ doped P3HT film has been investigated to understand superior optical property of F4TCNQ incorporated film. Mott Schottky analysis has been conducted to enunciate the enhanced electronic property with F4TCNQ dopant in P3HT HTL compared to pristine P3HT.
KW - Device stability
KW - F4TCNQ dopant
KW - Low temperature process
KW - Optoelectronic property
KW - P3HT HTL doping
KW - Perovskite
UR - http://www.scopus.com/inward/record.url?scp=85048492721&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2017.8366356
DO - 10.1109/PVSC.2017.8366356
M3 - Conference Paper published in Proceedings
AN - SCOPUS:85048492721
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 2079
EP - 2083
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - IEEE, Institute of Electrical and Electronics Engineers
CY - Piscataway, NJ
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -