Graded (AlzGa1-z)xIn1-xP Window-Emitter Structures for Improved Short-Wavelength Response

Md Arafat Mahmud, Naveen Kumar Elumalai, Mushfika Baishakhi Upama, Dian Wang, Matthew Wright, Kah Howe Chan, Cheng Xu, Ashraf Uddin

Research output: Chapter in Book/Report/Conference proceedingConference Paper published in Proceedingspeer-review

Abstract

Methyl Ammonium Lead Halide Perovskite solar have shown immense potential to be a 'Game Changer' in the photovoltaic industry. Major barriers to commercialization of Perovskite solar cells are poor device stability and high temperature requirement with TiO2 electron transport layer, widely used in efficient Perovskite devices. Apart from severe moisture sensitivity and thermal degradation, Perovskite layer can be decomposed due to the TBP additive incorporation with Li-TFSI dopant in most commonly used hole transport layers like Spiro OMeTAD and P3HT. Nearly 500° C sintering temperature requirement for Titania electron transport layer also impedes the Perovskite manufacturing in roll-to-roll process on flexible substrate which has a stringent processing condition of sub 150° C temperature. In this work, we have introduced F4TCNQ dopant to replace TBP and Li-TFSI in P3HT HTL in a low temperature (<150° C) solgel ZnO ETL processed Methyl Ammonium Lead Triiodide Perovskite solar cell. F4TCNQ doped P3HT HTL devices have shown over two times higher power conversion efficiency compared to pristine P3HT HTL devices. To comprehend the performance enhancement with F4TCNQ dopant in P3HT, we have examined the optical and electronic properties of both the pristine and F4TCNQ doped P3HT devices. Absorbance of Perovskite film lying underneath the undoped and the F4TCNQ doped P3HT film has been investigated to understand superior optical property of F4TCNQ incorporated film. Mott Schottky analysis has been conducted to enunciate the enhanced electronic property with F4TCNQ dopant in P3HT HTL compared to pristine P3HT.

Original languageEnglish
Title of host publication2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Place of PublicationPiscataway, NJ
PublisherIEEE, Institute of Electrical and Electronics Engineers
Pages2079-2083
Number of pages5
ISBN (Electronic)9781509056057
DOIs
Publication statusPublished - 2017
Externally publishedYes
Event44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States
Duration: 25 Jun 201730 Jun 2017

Publication series

Name2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/TerritoryUnited States
CityWashington
Period25/06/1730/06/17

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