High open-circuit voltage in perovskite solar cells

The role of hole transport layer

David Ompong, Jai Singh

Research output: Contribution to journalArticleResearchpeer-review

Abstract

Using the drift-diffusion model, a new expression for the open-circuit voltage (Voc) in perovskite solar cells is derived. The Voc increases with the ratio of the charge carriermobilities (μe/μh) and by lowering the HOMO energy level of the hole transport layer (HTL). Using the derived Voc , we have found an analytical expression for the bimolecular recombination coefficient which decreases exponentially with increasing temperature. We have shown that the recombination coefficient thus derived is reduced by the formation of polarons, which may be expected to increase the photocurrent and hence power conversion efficiency in perovskite solar cells.
Original languageEnglish
Pages (from-to)104-108
Number of pages5
JournalOrganic Electronics
Volume63
DOIs
Publication statusPublished - Dec 2018

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recombination coefficient
Open circuit voltage
open circuit voltage
Electron energy levels
Conversion efficiency
high voltages
solar cells
energy levels
Temperature
temperature
Perovskite solar cells

Cite this

@article{1e9d1b16adf04fbb93c6210d294a6c05,
title = "High open-circuit voltage in perovskite solar cells: The role of hole transport layer",
abstract = "Using the drift-diffusion model, a new expression for the open-circuit voltage (Voc) in perovskite solar cells is derived. The Voc increases with the ratio of the charge carriermobilities (μe/μh) and by lowering the HOMO energy level of the hole transport layer (HTL). Using the derived Voc , we have found an analytical expression for the bimolecular recombination coefficient which decreases exponentially with increasing temperature. We have shown that the recombination coefficient thus derived is reduced by the formation of polarons, which may be expected to increase the photocurrent and hence power conversion efficiency in perovskite solar cells.",
author = "David Ompong and Jai Singh",
year = "2018",
month = "12",
doi = "10.1016/j.orgel.2018.09.006",
language = "English",
volume = "63",
pages = "104--108",
journal = "Organic Electronics: physics, materials, applications",
issn = "1566-1199",
publisher = "Elsevier",

}

High open-circuit voltage in perovskite solar cells : The role of hole transport layer. / Ompong, David; Singh, Jai.

In: Organic Electronics, Vol. 63, 12.2018, p. 104-108.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - High open-circuit voltage in perovskite solar cells

T2 - The role of hole transport layer

AU - Ompong, David

AU - Singh, Jai

PY - 2018/12

Y1 - 2018/12

N2 - Using the drift-diffusion model, a new expression for the open-circuit voltage (Voc) in perovskite solar cells is derived. The Voc increases with the ratio of the charge carriermobilities (μe/μh) and by lowering the HOMO energy level of the hole transport layer (HTL). Using the derived Voc , we have found an analytical expression for the bimolecular recombination coefficient which decreases exponentially with increasing temperature. We have shown that the recombination coefficient thus derived is reduced by the formation of polarons, which may be expected to increase the photocurrent and hence power conversion efficiency in perovskite solar cells.

AB - Using the drift-diffusion model, a new expression for the open-circuit voltage (Voc) in perovskite solar cells is derived. The Voc increases with the ratio of the charge carriermobilities (μe/μh) and by lowering the HOMO energy level of the hole transport layer (HTL). Using the derived Voc , we have found an analytical expression for the bimolecular recombination coefficient which decreases exponentially with increasing temperature. We have shown that the recombination coefficient thus derived is reduced by the formation of polarons, which may be expected to increase the photocurrent and hence power conversion efficiency in perovskite solar cells.

UR - http://www.scopus.com/inward/record.url?scp=85053442907&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2018.09.006

DO - 10.1016/j.orgel.2018.09.006

M3 - Article

VL - 63

SP - 104

EP - 108

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

SN - 1566-1199

ER -