Influence of trap depth on charge transport in inverted bulk heterojunction solar cells employing ZnO as electron transport layer

Naveen Kumar Elumalai, Chellappan Vijila, Arthi Sridhar, Seeram Ramakrishna

Research output: Chapter in Book/Report/Conference proceedingConference Paper published in Proceedingspeer-review

Abstract

Inverted organic solar cells with device structure ITO/ZnO/ poly(3- hexylthiophene) (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) /MoO3 /Ag were fabricated employing low temperature solution processed ZnO as electron selective layer. Devices with varying film thickness of ZnO interlayer were investigated. The optimum film thickness was determined from photovoltaic parameters obtained from current-voltage measurements. The type of charge transport process, distribution of trap states and the ohmicity of the contacts in the optimized device were evaluated using the temperature and illumination intensity dependent study. The results demonstrate the effect of trap depth on device performance and its distribution on the stability of contacts.
Original languageEnglish
Title of host publication2013 IEEE 5th International Nanoelectronics Conference (INEC)
Pages346-349
Number of pages4
ISBN (Electronic)978-1-4673-4842-3
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event2013 IEEE 5th International Nanoelectronics Conference (INEC) - , Singapore
Duration: 2 Jan 20134 Jan 2013

Conference

Conference2013 IEEE 5th International Nanoelectronics Conference (INEC)
Country/TerritorySingapore
Period2/01/134/01/13

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