Influence of trap depth on charge transport in inverted bulk heterojunction solar cells employing ZnO as electron transport layer

Naveen Kumar Elumalai; Chellappan Vijila; Arthi Sridhar; Seeram Ramakrishna

doi:10.1109/INEC.2013.6466043

Influence of trap depth on charge transport in inverted bulk heterojunction solar cells employing ZnO as electron transport layer

Naveen Kumar Elumalai, Chellappan Vijila, Arthi Sridhar, Seeram Ramakrishna

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper published in Proceedings › peer-review

Abstract

Inverted organic solar cells with device structure ITO/ZnO/ poly(3- hexylthiophene) (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) /MoO₃ /Ag were fabricated employing low temperature solution processed ZnO as electron selective layer. Devices with varying film thickness of ZnO interlayer were investigated. The optimum film thickness was determined from photovoltaic parameters obtained from current-voltage measurements. The type of charge transport process, distribution of trap states and the ohmicity of the contacts in the optimized device were evaluated using the temperature and illumination intensity dependent study. The results demonstrate the effect of trap depth on device performance and its distribution on the stability of contacts.

Original language	English
Title of host publication	2013 IEEE 5th International Nanoelectronics Conference (INEC)
Pages	346-349
Number of pages	4
ISBN (Electronic)	978-1-4673-4842-3
DOIs	https://doi.org/10.1109/INEC.2013.6466043
Publication status	Published - 2013
Externally published	Yes
Event	2013 IEEE 5th International Nanoelectronics Conference (INEC) - , Singapore Duration: 2 Jan 2013 → 4 Jan 2013

Conference

Conference	2013 IEEE 5th International Nanoelectronics Conference (INEC)
Country/Territory	Singapore
Period	2/01/13 → 4/01/13

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10.1109/INEC.2013.6466043

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title = "Influence of trap depth on charge transport in inverted bulk heterojunction solar cells employing ZnO as electron transport layer",

abstract = "Inverted organic solar cells with device structure ITO/ZnO/ poly(3- hexylthiophene) (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) /MoO3 /Ag were fabricated employing low temperature solution processed ZnO as electron selective layer. Devices with varying film thickness of ZnO interlayer were investigated. The optimum film thickness was determined from photovoltaic parameters obtained from current-voltage measurements. The type of charge transport process, distribution of trap states and the ohmicity of the contacts in the optimized device were evaluated using the temperature and illumination intensity dependent study. The results demonstrate the effect of trap depth on device performance and its distribution on the stability of contacts.",

author = "Elumalai, {Naveen Kumar} and Chellappan Vijila and Arthi Sridhar and Seeram Ramakrishna",

year = "2013",

doi = "10.1109/INEC.2013.6466043",

language = "English",

isbn = "978-1-4673-4840-9",

pages = "346--349",

booktitle = "2013 IEEE 5th International Nanoelectronics Conference (INEC)",

note = "2013 IEEE 5th International Nanoelectronics Conference (INEC) ; Conference date: 02-01-2013 Through 04-01-2013",

}

Elumalai, NK, Vijila, C, Sridhar, A & Ramakrishna, S 2013, Influence of trap depth on charge transport in inverted bulk heterojunction solar cells employing ZnO as electron transport layer. in 2013 IEEE 5th International Nanoelectronics Conference (INEC). pp. 346-349, 2013 IEEE 5th International Nanoelectronics Conference (INEC), Singapore, 2/01/13. https://doi.org/10.1109/INEC.2013.6466043

Influence of trap depth on charge transport in inverted bulk heterojunction solar cells employing ZnO as electron transport layer. / Elumalai, Naveen Kumar; Vijila, Chellappan; Sridhar, Arthi; Ramakrishna, Seeram.

2013 IEEE 5th International Nanoelectronics Conference (INEC). 2013. p. 346-349.

Research output: Chapter in Book/Report/Conference proceeding › Conference Paper published in Proceedings › peer-review

TY - GEN

T1 - Influence of trap depth on charge transport in inverted bulk heterojunction solar cells employing ZnO as electron transport layer

AU - Elumalai, Naveen Kumar

AU - Vijila, Chellappan

AU - Sridhar, Arthi

AU - Ramakrishna, Seeram

PY - 2013

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N2 - Inverted organic solar cells with device structure ITO/ZnO/ poly(3- hexylthiophene) (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) /MoO3 /Ag were fabricated employing low temperature solution processed ZnO as electron selective layer. Devices with varying film thickness of ZnO interlayer were investigated. The optimum film thickness was determined from photovoltaic parameters obtained from current-voltage measurements. The type of charge transport process, distribution of trap states and the ohmicity of the contacts in the optimized device were evaluated using the temperature and illumination intensity dependent study. The results demonstrate the effect of trap depth on device performance and its distribution on the stability of contacts.

AB - Inverted organic solar cells with device structure ITO/ZnO/ poly(3- hexylthiophene) (P3HT):[6,6]-phenyl C61 butyric acid methyl ester (PCBM) /MoO3 /Ag were fabricated employing low temperature solution processed ZnO as electron selective layer. Devices with varying film thickness of ZnO interlayer were investigated. The optimum film thickness was determined from photovoltaic parameters obtained from current-voltage measurements. The type of charge transport process, distribution of trap states and the ohmicity of the contacts in the optimized device were evaluated using the temperature and illumination intensity dependent study. The results demonstrate the effect of trap depth on device performance and its distribution on the stability of contacts.

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DO - 10.1109/INEC.2013.6466043

M3 - Conference Paper published in Proceedings

SN - 978-1-4673-4840-9

SP - 346

EP - 349

BT - 2013 IEEE 5th International Nanoelectronics Conference (INEC)

T2 - 2013 IEEE 5th International Nanoelectronics Conference (INEC)

Y2 - 2 January 2013 through 4 January 2013

ER -

Influence of trap depth on charge transport in inverted bulk heterojunction solar cells employing ZnO as electron transport layer

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