Investigating the Impact of Interfacial Layers on Device Performance of Highly Stable Cs2InBiBr6 Based Double Perovskite Solar Cells

Guolong Meng, Naveen Kumar Elumalai, Hooman Mehdizadeh-Rad, Kiran Sreedhar Ram, Daniel Dodzi Yao Setsoafia, David Ompong

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Abstract

Perovskite solar cells, a third-generation photovoltaic technology, have recently emerged as a game-changing innovation. However, lead (Pb) is a toxic heavy metal, and it is crucial to explore lead-free perovskite solar cells with continuously improving efficiency for long-term development. Recently, materials researchers have discovered a lead-free double perovskite solar cell material, Cs2InBiBr6 with a small direct bandgap of 1.27 eV and strong thermodynamic and mechanical structural stability. The power conversion efficiency of Cs2InBiBr6-based perovskite solar cells is not reported yet. To investigate its potential, a solar cell capacitance simulator to analyze the solar cell structure of FTO (Fluorine Doped Tin Oxide)/ETL (Electron Transport Layer)/Cs2InBiBr6/HTL (Hole Transport Layer)/Au, selecting appropriate hole transport materials and electron transmission materials to achieve high efficiency is used. Moreover, this study explores the impact of several factors, including absorber layer thickness, acceptor and donor doping density, and the influence of total defect density of the perovskite and interface layers on the performance of solar cells. Advanced device characterization methods such as Mott-Schottky analysis are performed to unravel the effect of interfaces on the device performance. The solar cell with the device structure FTO/TiO2/Cs2InBiBr6/Cu2O/Au achieves an outstanding PCE of 23.64% demonstrating the immense potential of Cs2InBiBr6 as a lead-free double perovskite solar cell absorber layer.

Original languageEnglish
Article number2300784
Pages (from-to)1-13
Number of pages13
JournalAdvanced Theory and Simulations
Volume7
Issue number2
Early online date8 Dec 2023
DOIs
Publication statusPublished - Feb 2024

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