Microscopic description of double-well potential in tetrahedrally bonded amorphous semiconductors

H. P. Fang, X. J. Fu, S. Dyrting, K. Y. Szeto, Ping Sheng

Research output: Contribution to journalConference article

Abstract

Using molecular dynamics, we present a quantitative method which systematically finds double-well potentials in amorphous silicon. A number of double-well potentials with low asymmetries was found to enable a structurally explicit microscopic portrayal of tunneling states in covalently bonded amorphous systems. Study of the short-range order shows these states to be predominantly associated with dangling bonds.

Original languageEnglish
Pages (from-to)211-213
Number of pages3
JournalPhysica B: Condensed Matter
Volume279
Issue number1-3
DOIs
Publication statusPublished - Apr 2000
Externally publishedYes
EventThe 5th International Conference on Electrical Transport and Optical Properties of Inhomogeneous Media (ETOPIM5) - Kowloon Tong, Hong Kong
Duration: 21 Jun 199925 Jun 1999

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