Using molecular dynamics, we present a quantitative method which systematically finds double-well potentials in amorphous silicon. A number of double-well potentials with low asymmetries was found to enable a structurally explicit microscopic portrayal of tunneling states in covalently bonded amorphous systems. Study of the short-range order shows these states to be predominantly associated with dangling bonds.
|Number of pages||3|
|Journal||Physica B: Condensed Matter|
|Publication status||Published - Apr 2000|
|Event||The 5th International Conference on Electrical Transport and Optical Properties of Inhomogeneous Media (ETOPIM5) - Kowloon Tong, Hong Kong|
Duration: 21 Jun 1999 → 25 Jun 1999