Optical and Ferromagnetic Properties of Ni-Doped CdTeSe Quantum Dots

N. X. Ca, N. T. Hien, P. N. Loan, P. M. Tan, U. T.D. Thuy, T. L. Phan, Q. B. Nguyen

Research output: Contribution to journalArticleResearchpeer-review

Abstract

A chemical method was used to prepare Cd 1−x Ni x Te 0.5 Se 0.5 (Cd 1−x Ni x TeSe, x = 0–0.1) quantum dots (QDs) with particle sizes of 3–4 nm. Structural analyses of x-ray diffraction patterns indicate that all QDs are single-phase and crystallize in the zincblende-type structure. The lattice constant gradually decreases with increasing x in Cd 1−x Ni x TeSe. This is due to a partial replacement of Ni (a smaller ion) for Cd 2+ (a larger ion). Our study also indicates that the Ni doping causes the red shift of the longitudinal optical mode, the blue shift of the excitonic absorption edge and photoluminescence (PL) peak, and a gradual decrease of the PL quantum yield. When the excitation power increases, the PL peak of CdTeSe (x = 0) is almost unchanged, while that of Cd 1−x Ni x TeSe QDs (x > 0) shifts linearly towards high energies, which is related to the state-filling effect caused by Ni 2+ dopants. Comparing with pure CdTeSe, Ni-doped QDs have longer PL decay times, up to ∼ 580 ns. Particularly, all QDs exhibit weak ferromagnetic (FM) order at room temperature generated from defect-mediated exchange interactions of Ni 2+ ions. Such results proved ternary Cd 1−x Ni x TeSe QDs having simultaneously the optical and FM properties. Together with very long decay times, they are considered as potential materials for biosensing, photovoltaic and photocatalytic applications.

Original languageEnglish
Pages (from-to)2593-2599
Number of pages7
JournalJournal of Electronic Materials
Volume48
Issue number4
DOIs
Publication statusPublished - 15 Apr 2019
Externally publishedYes

Fingerprint

Semiconductor quantum dots
quantum dots
optical properties
Photoluminescence
photoluminescence
Doping (additives)
Ions
ions
Exchange interactions
zincblende
decay
Quantum yield
Heavy ions
blue shift
red shift
Diffraction patterns
Lattice constants
x ray diffraction
diffraction patterns
Particle size

Cite this

Ca, N. X., Hien, N. T., Loan, P. N., Tan, P. M., Thuy, U. T. D., Phan, T. L., & Nguyen, Q. B. (2019). Optical and Ferromagnetic Properties of Ni-Doped CdTeSe Quantum Dots. Journal of Electronic Materials, 48(4), 2593-2599. https://doi.org/10.1007/s11664-019-07017-9
Ca, N. X. ; Hien, N. T. ; Loan, P. N. ; Tan, P. M. ; Thuy, U. T.D. ; Phan, T. L. ; Nguyen, Q. B. / Optical and Ferromagnetic Properties of Ni-Doped CdTeSe Quantum Dots. In: Journal of Electronic Materials. 2019 ; Vol. 48, No. 4. pp. 2593-2599.
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Optical and Ferromagnetic Properties of Ni-Doped CdTeSe Quantum Dots. / Ca, N. X.; Hien, N. T.; Loan, P. N.; Tan, P. M.; Thuy, U. T.D.; Phan, T. L.; Nguyen, Q. B.

In: Journal of Electronic Materials, Vol. 48, No. 4, 15.04.2019, p. 2593-2599.

Research output: Contribution to journalArticleResearchpeer-review

TY - JOUR

T1 - Optical and Ferromagnetic Properties of Ni-Doped CdTeSe Quantum Dots

AU - Ca, N. X.

AU - Hien, N. T.

AU - Loan, P. N.

AU - Tan, P. M.

AU - Thuy, U. T.D.

AU - Phan, T. L.

AU - Nguyen, Q. B.

PY - 2019/4/15

Y1 - 2019/4/15

N2 - A chemical method was used to prepare Cd 1−x Ni x Te 0.5 Se 0.5 (Cd 1−x Ni x TeSe, x = 0–0.1) quantum dots (QDs) with particle sizes of 3–4 nm. Structural analyses of x-ray diffraction patterns indicate that all QDs are single-phase and crystallize in the zincblende-type structure. The lattice constant gradually decreases with increasing x in Cd 1−x Ni x TeSe. This is due to a partial replacement of Ni (a smaller ion) for Cd 2+ (a larger ion). Our study also indicates that the Ni doping causes the red shift of the longitudinal optical mode, the blue shift of the excitonic absorption edge and photoluminescence (PL) peak, and a gradual decrease of the PL quantum yield. When the excitation power increases, the PL peak of CdTeSe (x = 0) is almost unchanged, while that of Cd 1−x Ni x TeSe QDs (x > 0) shifts linearly towards high energies, which is related to the state-filling effect caused by Ni 2+ dopants. Comparing with pure CdTeSe, Ni-doped QDs have longer PL decay times, up to ∼ 580 ns. Particularly, all QDs exhibit weak ferromagnetic (FM) order at room temperature generated from defect-mediated exchange interactions of Ni 2+ ions. Such results proved ternary Cd 1−x Ni x TeSe QDs having simultaneously the optical and FM properties. Together with very long decay times, they are considered as potential materials for biosensing, photovoltaic and photocatalytic applications.

AB - A chemical method was used to prepare Cd 1−x Ni x Te 0.5 Se 0.5 (Cd 1−x Ni x TeSe, x = 0–0.1) quantum dots (QDs) with particle sizes of 3–4 nm. Structural analyses of x-ray diffraction patterns indicate that all QDs are single-phase and crystallize in the zincblende-type structure. The lattice constant gradually decreases with increasing x in Cd 1−x Ni x TeSe. This is due to a partial replacement of Ni (a smaller ion) for Cd 2+ (a larger ion). Our study also indicates that the Ni doping causes the red shift of the longitudinal optical mode, the blue shift of the excitonic absorption edge and photoluminescence (PL) peak, and a gradual decrease of the PL quantum yield. When the excitation power increases, the PL peak of CdTeSe (x = 0) is almost unchanged, while that of Cd 1−x Ni x TeSe QDs (x > 0) shifts linearly towards high energies, which is related to the state-filling effect caused by Ni 2+ dopants. Comparing with pure CdTeSe, Ni-doped QDs have longer PL decay times, up to ∼ 580 ns. Particularly, all QDs exhibit weak ferromagnetic (FM) order at room temperature generated from defect-mediated exchange interactions of Ni 2+ ions. Such results proved ternary Cd 1−x Ni x TeSe QDs having simultaneously the optical and FM properties. Together with very long decay times, they are considered as potential materials for biosensing, photovoltaic and photocatalytic applications.

KW - CdTeSe quantum dots

KW - Ni-doping

KW - optical and magnetic properties

KW - state filling effect

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U2 - 10.1007/s11664-019-07017-9

DO - 10.1007/s11664-019-07017-9

M3 - Article

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JF - Journal of Electronic Materials

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