Abstract
The optimized thicknesses of the active individual layers in organic thin film solar cells are obtained using optical admittance analysis method (OAAM). We have used OAAM to simulate the optical properties of two bulk-heterojunction (BHJ) organic solar cells (OSCs) of structures: (1) ITO/PEDOT:PSS/P3HT:PCBM/Lif/Al and (2) ITO/PTB7:PCBM/Lif/Ag. The optimal thicknesses of 75 nm and 115 nm of P3HT:PCBM and PTB7:PCBM blend layers, respectively, are obtained by maximising the absorbance in these layers through this simulation, which agree very well with the experimental results. The simulated short-circuit current density JSC is plotted as a function of the active layer thickness for a few selected thicknesses of the Al cathode in these two OSCs and it is found that JSC becomes maximum when the thickness of Al cathode is 40 nm. Using these optimised thicknesses of the active layers in these two cells the short-circuit current density is found to increase in ITO/PEDOT:PSS/P3HT:PCBM/Lif/Al BHJ OSC by 4.8% and in ITO/PTB7:PCBM/Lif/Ag by 13.3%.
| Original language | English |
|---|---|
| Pages (from-to) | 7100–7106 |
| Number of pages | 7 |
| Journal | Journal of Materials Science: Materials in Electronics |
| Volume | 28 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - May 2017 |
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Optimization of photocurrent in bulk heterojunction organic solar cells using optical admittance analysis method. / Ompong, David; Narayan, Monishka; Singh, Jai.
In: Journal of Materials Science: Materials in Electronics, Vol. 28, No. 10, 05.2017, p. 7100–7106.Research output: Contribution to journal › Article › Research › peer-review
TY - JOUR
T1 - Optimization of photocurrent in bulk heterojunction organic solar cells using optical admittance analysis method
AU - Ompong, David
AU - Narayan, Monishka
AU - Singh, Jai
PY - 2017/5
Y1 - 2017/5
N2 - The optimized thicknesses of the active individual layers in organic thin film solar cells are obtained using optical admittance analysis method (OAAM). We have used OAAM to simulate the optical properties of two bulk-heterojunction (BHJ) organic solar cells (OSCs) of structures: (1) ITO/PEDOT:PSS/P3HT:PCBM/Lif/Al and (2) ITO/PTB7:PCBM/Lif/Ag. The optimal thicknesses of 75 nm and 115 nm of P3HT:PCBM and PTB7:PCBM blend layers, respectively, are obtained by maximising the absorbance in these layers through this simulation, which agree very well with the experimental results. The simulated short-circuit current density JSC is plotted as a function of the active layer thickness for a few selected thicknesses of the Al cathode in these two OSCs and it is found that JSC becomes maximum when the thickness of Al cathode is 40 nm. Using these optimised thicknesses of the active layers in these two cells the short-circuit current density is found to increase in ITO/PEDOT:PSS/P3HT:PCBM/Lif/Al BHJ OSC by 4.8% and in ITO/PTB7:PCBM/Lif/Ag by 13.3%.
AB - The optimized thicknesses of the active individual layers in organic thin film solar cells are obtained using optical admittance analysis method (OAAM). We have used OAAM to simulate the optical properties of two bulk-heterojunction (BHJ) organic solar cells (OSCs) of structures: (1) ITO/PEDOT:PSS/P3HT:PCBM/Lif/Al and (2) ITO/PTB7:PCBM/Lif/Ag. The optimal thicknesses of 75 nm and 115 nm of P3HT:PCBM and PTB7:PCBM blend layers, respectively, are obtained by maximising the absorbance in these layers through this simulation, which agree very well with the experimental results. The simulated short-circuit current density JSC is plotted as a function of the active layer thickness for a few selected thicknesses of the Al cathode in these two OSCs and it is found that JSC becomes maximum when the thickness of Al cathode is 40 nm. Using these optimised thicknesses of the active layers in these two cells the short-circuit current density is found to increase in ITO/PEDOT:PSS/P3HT:PCBM/Lif/Al BHJ OSC by 4.8% and in ITO/PTB7:PCBM/Lif/Ag by 13.3%.
UR - http://www.scopus.com/inward/record.url?scp=85012903272&partnerID=8YFLogxK
U2 - 10.1007/s10854-017-6491-8
DO - 10.1007/s10854-017-6491-8
M3 - Article
VL - 28
SP - 7100
EP - 7106
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 10
ER -