Optimizing gallium arsenide multiple quantum wells as high-performance photovoltaic devices

A. Thilagam; J. Singh; P. Stulik

doi:10.1016/S0927-0248(97)00154-2

Optimizing gallium arsenide multiple quantum wells as high-performance photovoltaic devices

A. Thilagam, J. Singh, P. Stulik

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We examine the possibility of using gallium arsenide (GaAs) quantum wells, which have significantly high absorption coefficient for photon energies near the energy band gap, as high-performance solar cells. Using a semi-empirical model of the absorption spectrum, we determine the critical well widths at which the efficiencies of solar cells based on the GaAs/Al_xGa_{1 - x}As quantum well structure can be optimized.

Original language	English
Pages (from-to)	243-249
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	50
Issue number	1-4
DOIs	https://doi.org/10.1016/S0927-0248(97)00154-2
Publication status	Published - Jan 1998

Bibliographical note

Funding Information:
One of us (A. Thilagam) acknowledges the support from an NTU Postdoctoral Research Fellowship.

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/S0927-0248(97)00154-2

Cite this

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title = "Optimizing gallium arsenide multiple quantum wells as high-performance photovoltaic devices",

abstract = "We examine the possibility of using gallium arsenide (GaAs) quantum wells, which have significantly high absorption coefficient for photon energies near the energy band gap, as high-performance solar cells. Using a semi-empirical model of the absorption spectrum, we determine the critical well widths at which the efficiencies of solar cells based on the GaAs/AlxGa1 - xAs quantum well structure can be optimized.",

keywords = "Exiton, Quantum well, Solar cell",

author = "A. Thilagam and J. Singh and P. Stulik",

note = "Funding Information: One of us (A. Thilagam) acknowledges the support from an NTU Postdoctoral Research Fellowship.",

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AU - Thilagam, A.

AU - Singh, J.

AU - Stulik, P.

N1 - Funding Information: One of us (A. Thilagam) acknowledges the support from an NTU Postdoctoral Research Fellowship.

PY - 1998/1

Y1 - 1998/1

N2 - We examine the possibility of using gallium arsenide (GaAs) quantum wells, which have significantly high absorption coefficient for photon energies near the energy band gap, as high-performance solar cells. Using a semi-empirical model of the absorption spectrum, we determine the critical well widths at which the efficiencies of solar cells based on the GaAs/AlxGa1 - xAs quantum well structure can be optimized.

AB - We examine the possibility of using gallium arsenide (GaAs) quantum wells, which have significantly high absorption coefficient for photon energies near the energy band gap, as high-performance solar cells. Using a semi-empirical model of the absorption spectrum, we determine the critical well widths at which the efficiencies of solar cells based on the GaAs/AlxGa1 - xAs quantum well structure can be optimized.

KW - Exiton

KW - Quantum well

KW - Solar cell

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U2 - 10.1016/S0927-0248(97)00154-2

DO - 10.1016/S0927-0248(97)00154-2

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JF - Solar Energy Materials and Solar Cells

IS - 1-4

ER -

Optimizing gallium arsenide multiple quantum wells as high-performance photovoltaic devices

Abstract

Bibliographical note

UN SDGs

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