Abstract
Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories. � 2005 Elsevier B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 50-55 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 248 |
| Issue number | 1-4 |
| Publication status | Published - 2005 |