Photoexcitation-induced processes in amorphous semiconductors

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    Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories. � 2005 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)50-55
    Number of pages6
    JournalApplied Surface Science
    Issue number1-4
    Publication statusPublished - 2005


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