Radiative recombination of excitons in amorphous semiconductors

Jai Singh

doi:10.1016/j.jlumin.2004.09.076

Radiative recombination of excitons in amorphous semiconductors

Research output: Contribution to journal › Article › peer-review

Abstract

A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments.

Original language	English
Pages (from-to)	40-44
Number of pages	5
Journal	Journal of Luminescence
Volume	112
Issue number	1
DOIs	https://doi.org/10.1016/j.jlumin.2004.09.076
Publication status	Published - Apr 2005

Bibliographical note

Funding Information:
We have very much benefited from discussions with Professors T. Aoki and K. Shimakawa during the course of this work. The work is supported by the Australian Research Council's large grants (2000–2003) and IREX (2001–2003) schemes.

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10.1016/j.jlumin.2004.09.076

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title = "Radiative recombination of excitons in amorphous semiconductors",

abstract = "A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments.",

keywords = "Amorphous semiconductors, Effective mass, Photoluminescence, Radiative recombination",

author = "Jai Singh",

note = "Funding Information: We have very much benefited from discussions with Professors T. Aoki and K. Shimakawa during the course of this work. The work is supported by the Australian Research Council's large grants (2000–2003) and IREX (2001–2003) schemes.",

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N2 - A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments.

AB - A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments.

KW - Amorphous semiconductors

KW - Effective mass

KW - Photoluminescence

KW - Radiative recombination

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M3 - Article

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VL - 112

SP - 40

EP - 44

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 1

ER -

Radiative recombination of excitons in amorphous semiconductors

Abstract

Bibliographical note

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