Radiative recombination of excitons in amorphous semiconductors

Jai Singh

    Research output: Contribution to journalArticle

    Abstract

    A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments. � 2004 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)40-44
    Number of pages5
    JournalJournal of Luminescence
    Volume112
    Issue number1
    Publication statusPublished - 2005

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