Abstract
A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments. � 2004 Elsevier B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 40-44 |
| Number of pages | 5 |
| Journal | Journal of Luminescence |
| Volume | 112 |
| Issue number | 1 |
| Publication status | Published - 2005 |