Abstract
A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments.
Original language | English |
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Pages (from-to) | 40-44 |
Number of pages | 5 |
Journal | Journal of Luminescence |
Volume | 112 |
Issue number | 1 |
DOIs | |
Publication status | Published - Apr 2005 |
Bibliographical note
Funding Information:We have very much benefited from discussions with Professors T. Aoki and K. Shimakawa during the course of this work. The work is supported by the Australian Research Council's large grants (2000–2003) and IREX (2001–2003) schemes.