TY - JOUR
T1 - Saturation of Open-Circuit Voltage at Higher Light Intensity Caused by Interfacial Defects and Nonradiative Recombination Losses in Perovskite Solar Cells
AU - Ompong, David
AU - Singh, Jai
AU - Sreedhar Ram, Kiran
AU - Setsoafia, Daniel Dodzi Yao
AU - Mehdizadeh Rad, Hooman
N1 - Funding Information:
Open access publishing facilitated by Charles Darwin University, as part of the Wiley - Charles Darwin University agreement via the Council of Australian University Librarians.
Publisher Copyright:
© 2022 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH.
PY - 2023/1/5
Y1 - 2023/1/5
N2 - A new analytical expression that directly relates the open-circuit voltage (Voc) in perovskite solar cells (PSCs) to the quasi-Fermi level splitting (QFLS), interface energy offsets, and nonradiative recombination losses has been derived. It is found that the QFLS of the active layer plays a dominant role in enhancing Voc of PSCs. The newly derived Voc is applied to two PSCs with the hole transport layer (HTL) of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and poly(3-hexylthiophene-2,5-diyl) (P3HT) and found that the first PSC has a higher Voc, which agrees well with the experimental results. It is found that both PSCs exhibit saturation of Voc at the higher charge carrier generation rates and hence at higher light intensities. The lower Voc in PSC with P3HT as HTL is attributed to the stronger band bending and higher interfacial defects. In accordance with the results, a large quasi-Fermi level splitting and a minimal interfacial energy offsets may be considered when selecting material for high Voc PSCs.
AB - A new analytical expression that directly relates the open-circuit voltage (Voc) in perovskite solar cells (PSCs) to the quasi-Fermi level splitting (QFLS), interface energy offsets, and nonradiative recombination losses has been derived. It is found that the QFLS of the active layer plays a dominant role in enhancing Voc of PSCs. The newly derived Voc is applied to two PSCs with the hole transport layer (HTL) of poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and poly(3-hexylthiophene-2,5-diyl) (P3HT) and found that the first PSC has a higher Voc, which agrees well with the experimental results. It is found that both PSCs exhibit saturation of Voc at the higher charge carrier generation rates and hence at higher light intensities. The lower Voc in PSC with P3HT as HTL is attributed to the stronger band bending and higher interfacial defects. In accordance with the results, a large quasi-Fermi level splitting and a minimal interfacial energy offsets may be considered when selecting material for high Voc PSCs.
KW - interfaces
KW - nonradiative recombination
KW - open-circuit voltage saturation
KW - perovskite solar cells
KW - quasi-Fermi level splitting
UR - http://www.scopus.com/inward/record.url?scp=85139406398&partnerID=8YFLogxK
U2 - 10.1002/admi.202201578
DO - 10.1002/admi.202201578
M3 - Article
AN - SCOPUS:85139406398
VL - 10
SP - 1
EP - 5
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
SN - 2196-7350
IS - 1
M1 - 2201578
ER -