Stark shifts of charged particles in semiconductor quantum wells

Thilagam Lohe

doi:10.1007/s003390050448

Stark shifts of charged particles in semiconductor quantum wells

Thilagam Lohe

Research output: Contribution to journal › Comment/debate

Abstract

We calculate the effect of a homogeneous electric field on electrons, holes and excitons confined in a quantum well structure consisting of alternate thin layers of well and barrier material. The electric field which acts perpendicular to the quantum well is taken as a perturbation on the quantum well structure confining the charges. The electron and hole energies in the conduction and valence subbands are calculated by solving a one-dimensional Schrödinger equation. The exciton binding energy is calculated using an improved excitonic model. Results obtained indicate the importance of higher-order excitons in optical transitions at high electric fields.

Original language	English
Pages (from-to)	83-89
Number of pages	7
Journal	Applied Physics A
Volume	64
Issue number	1
DOIs	https://doi.org/10.1007/s003390050448
Publication status	Published - 1996

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@article{4536bc55361c48c297f294ba5b02aa60,

title = "Stark shifts of charged particles in semiconductor quantum wells",

abstract = "We calculate the effect of a homogeneous electric field on electrons, holes and excitons confined in a quantum well structure consisting of alternate thin layers of well and barrier material. The electric field which acts perpendicular to the quantum well is taken as a perturbation on the quantum well structure confining the charges. The electron and hole energies in the conduction and valence subbands are calculated by solving a one-dimensional Schr{\"o}dinger equation. The exciton binding energy is calculated using an improved excitonic model. Results obtained indicate the importance of higher-order excitons in optical transitions at high electric fields.",

author = "Thilagam Lohe",

year = "1996",

doi = "10.1007/s003390050448",

language = "English",

volume = "64",

pages = "83--89",

journal = "Applied Physics A",

issn = "0947-8396",

number = "1",

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TY - JOUR

T1 - Stark shifts of charged particles in semiconductor quantum wells

AU - Lohe, Thilagam

PY - 1996

Y1 - 1996

N2 - We calculate the effect of a homogeneous electric field on electrons, holes and excitons confined in a quantum well structure consisting of alternate thin layers of well and barrier material. The electric field which acts perpendicular to the quantum well is taken as a perturbation on the quantum well structure confining the charges. The electron and hole energies in the conduction and valence subbands are calculated by solving a one-dimensional Schrödinger equation. The exciton binding energy is calculated using an improved excitonic model. Results obtained indicate the importance of higher-order excitons in optical transitions at high electric fields.

AB - We calculate the effect of a homogeneous electric field on electrons, holes and excitons confined in a quantum well structure consisting of alternate thin layers of well and barrier material. The electric field which acts perpendicular to the quantum well is taken as a perturbation on the quantum well structure confining the charges. The electron and hole energies in the conduction and valence subbands are calculated by solving a one-dimensional Schrödinger equation. The exciton binding energy is calculated using an improved excitonic model. Results obtained indicate the importance of higher-order excitons in optical transitions at high electric fields.

U2 - 10.1007/s003390050448

DO - 10.1007/s003390050448

M3 - Comment/debate

VL - 64

SP - 83

EP - 89

JO - Applied Physics A

JF - Applied Physics A

SN - 0947-8396

IS - 1

ER -

Stark shifts of charged particles in semiconductor quantum wells

Abstract

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