Abstract
We calculate the effect of a homogeneous electric field on electrons, holes and excitons confined in a quantum well structure consisting of alternate thin layers of well and barrier material. The electric field which acts perpendicular to the quantum well is taken as a perturbation on the quantum well structure confining the charges. The electron and hole energies in the conduction and valence subbands are calculated by solving a one-dimensional Schrödinger equation. The exciton binding energy is calculated using an improved excitonic model. Results obtained indicate the importance of higher-order excitons in optical transitions at high electric fields.
Original language | English |
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Pages (from-to) | 83-89 |
Number of pages | 7 |
Journal | Applied Physics A |
Volume | 64 |
Issue number | 1 |
DOIs |
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Publication status | Published - 1996 |