Stark shifts of charged particles in semiconductor quantum wells

Thilagam Lohe

    Research output: Contribution to journalComment/debate

    Abstract

    We calculate the effect of a homogeneous electric field on electrons, holes and excitons confined in a quantum well structure consisting of alternate thin layers of well and barrier material. The electric field which acts perpendicular to the quantum well is taken as a perturbation on the quantum well structure confining the charges. The electron and hole energies in the conduction and valence subbands are calculated by solving a one-dimensional Schrödinger equation. The exciton binding energy is calculated using an improved excitonic model. Results obtained indicate the importance of higher-order excitons in optical transitions at high electric fields.
    Original languageEnglish
    Pages (from-to)83-89
    Number of pages7
    JournalApplied Physics A
    Volume64
    Issue number1
    DOIs
    Publication statusPublished - 1996

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