Study of processes of reverse intersystem crossing (RISC) and thermally activated delayed fluorescence (TADF) in organic light emitting diodes (OLEDs)

Usman Shakeel, Jai Singh

Research output: Contribution to journalArticleResearchpeer-review

Abstract

A comprehensive theoretical study of reverse intersystem crossing (RISC), leading to thermally activated delayed fluorescence (TADF) is presented by deriving new expressions for the rates of RISC and TADF. Additionally, the internal and external quantum efficiencies of TADF based OLEDs have also been calculated. It is found that the calculated results agree reasonably well with the experimental results for the 11 TADF based materials selected in this study. To the best of authors’ knowledge, this is the first theoretical study to present the derivation and calculation of the rates and efficiency of TADF based OLEDs.

Original languageEnglish
Pages (from-to)121-124
Number of pages4
JournalOrganic Electronics: physics, materials, applications
Volume59
DOIs
Publication statusPublished - Aug 2018

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Organic light emitting diodes (OLED)
light emitting diodes
Fluorescence
fluorescence
Quantum efficiency
quantum efficiency
derivation

Cite this

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title = "Study of processes of reverse intersystem crossing (RISC) and thermally activated delayed fluorescence (TADF) in organic light emitting diodes (OLEDs)",
abstract = "A comprehensive theoretical study of reverse intersystem crossing (RISC), leading to thermally activated delayed fluorescence (TADF) is presented by deriving new expressions for the rates of RISC and TADF. Additionally, the internal and external quantum efficiencies of TADF based OLEDs have also been calculated. It is found that the calculated results agree reasonably well with the experimental results for the 11 TADF based materials selected in this study. To the best of authors’ knowledge, this is the first theoretical study to present the derivation and calculation of the rates and efficiency of TADF based OLEDs.",
keywords = "Intersystem crossing, Reverse intersystem crossing, Thermally activated delayed fluorescence",
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Study of processes of reverse intersystem crossing (RISC) and thermally activated delayed fluorescence (TADF) in organic light emitting diodes (OLEDs). / Shakeel, Usman; Singh, Jai.

In: Organic Electronics: physics, materials, applications, Vol. 59, 08.2018, p. 121-124.

Research output: Contribution to journalArticleResearchpeer-review

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T1 - Study of processes of reverse intersystem crossing (RISC) and thermally activated delayed fluorescence (TADF) in organic light emitting diodes (OLEDs)

AU - Shakeel, Usman

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N2 - A comprehensive theoretical study of reverse intersystem crossing (RISC), leading to thermally activated delayed fluorescence (TADF) is presented by deriving new expressions for the rates of RISC and TADF. Additionally, the internal and external quantum efficiencies of TADF based OLEDs have also been calculated. It is found that the calculated results agree reasonably well with the experimental results for the 11 TADF based materials selected in this study. To the best of authors’ knowledge, this is the first theoretical study to present the derivation and calculation of the rates and efficiency of TADF based OLEDs.

AB - A comprehensive theoretical study of reverse intersystem crossing (RISC), leading to thermally activated delayed fluorescence (TADF) is presented by deriving new expressions for the rates of RISC and TADF. Additionally, the internal and external quantum efficiencies of TADF based OLEDs have also been calculated. It is found that the calculated results agree reasonably well with the experimental results for the 11 TADF based materials selected in this study. To the best of authors’ knowledge, this is the first theoretical study to present the derivation and calculation of the rates and efficiency of TADF based OLEDs.

KW - Intersystem crossing

KW - Reverse intersystem crossing

KW - Thermally activated delayed fluorescence

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