Transferable tight-binding model for germanium

I OH; Jai Singh; Eun Jin Kim; C Chen

Transferable tight-binding model for germanium

I OH, Jai Singh, Eun Jin Kim, C Chen

Research output: Contribution to journal › Article › peer-review

Abstract

We present a transferable sp3s* tight-binding (TB) model for germanium within the first-nearest-neighbor interaction including both on-site and nearest-neighbor spin-orbit interactions. We have obtained TB parameters by optimizing the band structure and cohesive energy of Ge comparing with an ab-initio result. Our TB model produces the correct spin-orbit splitting and conduction band structure, which are very useful for studying the excited states. � 2005 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	1192-1195
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	351
Publication status	Published - 2005

Cite this

@article{f6d03ba047224ff596979e99ae4c37d1,

title = "Transferable tight-binding model for germanium",

abstract = "We present a transferable sp3s* tight-binding (TB) model for germanium within the first-nearest-neighbor interaction including both on-site and nearest-neighbor spin-orbit interactions. We have obtained TB parameters by optimizing the band structure and cohesive energy of Ge comparing with an ab-initio result. Our TB model produces the correct spin-orbit splitting and conduction band structure, which are very useful for studying the excited states. � 2005 Elsevier B.V. All rights reserved.",

keywords = "Band structure, Computer simulation, Hamiltonians, Matrix algebra, Molecular dynamics, Solid state devices, Transistors, Cohesive energy, Hamiltonian matrix elements, Solid-state transistors, Tight-binding (TB) model, Germanium",

author = "I OH and Jai Singh and Kim, {Eun Jin} and C Chen",

year = "2005",

language = "English",

volume = "351",

pages = "1192--1195",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier",

}

TY - JOUR

T1 - Transferable tight-binding model for germanium

AU - OH, I

AU - Singh, Jai

AU - Kim, Eun Jin

AU - Chen, C

PY - 2005

Y1 - 2005

N2 - We present a transferable sp3s* tight-binding (TB) model for germanium within the first-nearest-neighbor interaction including both on-site and nearest-neighbor spin-orbit interactions. We have obtained TB parameters by optimizing the band structure and cohesive energy of Ge comparing with an ab-initio result. Our TB model produces the correct spin-orbit splitting and conduction band structure, which are very useful for studying the excited states. � 2005 Elsevier B.V. All rights reserved.

AB - We present a transferable sp3s* tight-binding (TB) model for germanium within the first-nearest-neighbor interaction including both on-site and nearest-neighbor spin-orbit interactions. We have obtained TB parameters by optimizing the band structure and cohesive energy of Ge comparing with an ab-initio result. Our TB model produces the correct spin-orbit splitting and conduction band structure, which are very useful for studying the excited states. � 2005 Elsevier B.V. All rights reserved.

KW - Band structure

KW - Computer simulation

KW - Hamiltonians

KW - Matrix algebra

KW - Molecular dynamics

KW - Solid state devices

KW - Transistors

KW - Cohesive energy

KW - Hamiltonian matrix elements

KW - Solid-state transistors

KW - Tight-binding (TB) model

KW - Germanium

M3 - Article

VL - 351

SP - 1192

EP - 1195

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

ER -

Transferable tight-binding model for germanium

Abstract

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